Development of conductive a-C thin film material − ideal polarizable electrochemical
electrodes
Semiconductivity is imparted to amorphous carbon (a-C) films when nitrogen/boron
atoms are doped into the films by plasma enhanced
chemical vapor deposition method; therefore, N/P-type semiconductive
a-C with an optical gap of 0.5 eV can be obtained.
Overpotential of high nitrogen-doped conductive a-C electrodes for
the evolution of oxygen/hydrogen is high.
The electrodes exhibit a wide potential window of approximately 3
V, which is close to that of boron-doped diamond.
These electrochemical electrode materials with ideal polarizable
properties are expected to be applied to electrochemical sensors and electrodes
for electrolytic treatment.
References
1) Y. Tanaka, M. Furuta, Y. Kastuki, K. Kuriyama, R. Kuwabara, A. Fujishima
and K. Honda, Electrochimica Acta, 56 (3), pp. 1172-1181 (2011).
“Electrochemical Properties of N-doped Hydrogenated Amorphous Carbon
Films Fabricated by Plasma Enhanced Chemical Vapor Deposition Methods”
2) Kensuke Honda, Hiroshi Naragino, and Yohsuke Shimai, J. Electrochem. Soc., volume 161, issue 10, B207-B215 (2014).
“Control of electric conductivity and electrochemical activity of
hydrogenated amorphous carbon by incorporating boron atoms”
Patent
1) JP, 2008-189997, A
[Japanese Patent Publication No.] 2008-189997
[Application No.] 2007-26084
[Inventor] Kensuke Honda, Osamu Tsuji, Shinichi Motoyama, Yutaka
Kusuda
[Title of the invention] METHOD FOR PRODUCING CONDUCTIVE DIAMOND-LIKE
CARBON
[Applicant] Kensuke Honda, SAMCO INC.
[Date of filing] 5, February, 2007
2) JP, 2012-188688, A
[Japanese Patent Publication No.] 2012-188688
[Application No.] 2011-051933 [Inventor] Kensuke Honda [Title of the invention] FORMING METHOD OF DIAMOND-LIKE CARBON THIN FILM AND ELECTRODE MATERIAL
FORMED WITH THE THIN FILM ON METAL BASE BOARD [Applicant] Yamaguchi University [Date of filing] 9, March, 2011
